8 research outputs found

    Measuring Terminal Capacitance and Its Voltage Dependency for High-Voltage Power Devices

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    The switching behavior of semiconductor devices responds to charge/discharge phenomenon of terminal capacitance in the device. The differential capacitance in a semiconductor device varies with the applied voltage in accordance with the depleted region thickness. This study develops a C - V characterization system for high-voltage power transistors (e.g., MOSFET, insulated gate bipolar transistor, and JFET), which realizes the selective measurement of a specified capacitance from among several capacitances integrated in one device. Three capacitances between terminals are evaluated to specify device characteristics-the capacitance for gate-source, gate-drain, and drain-source. The input, output, and reverse transfer capacitance are also evaluated to assess the switching behavior of the power transistor in the circuit. Thus, this paper discusses the five specifications of a C -V characterization system and its measurement results. Moreover, the developed C -V characterization system enables measurement of the transistor capacitances from its blocking condition to the conducting condition with a varying gate bias voltage. The measured C -V characteristics show intricate changes in the low-bias-voltage region, which reflect the device structure. The monotonic capacitance change in the high-voltage region is attributable to the expansion of the depletion region in the drift region. These results help to understand the dynamic behavior of high-power devices during switching operation

    SiCパワートランジスタのC-V測定に基づく電力変換回路のための特性評価

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    京都大学0048新制・課程博士博士(工学)甲第15668号工博第3326号新制||工||1502(附属図書館)28205京都大学大学院工学研究科電気工学専攻(主査)教授 引原 隆士, 教授 木本 恒暢, 教授 和田 修己学位規則第4条第1項該当Doctor of Philosophy (Engineering)Kyoto UniversityDFA

    Characterization of the gate-voltage dependency of input capacitance in a SiC MOSFET

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    Characterization of the gate-voltage dependency of input capacitance in a SiC MOSFET

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    Modeling of Grid-connected with Permanent Magnet Synchronous Generator (PMSG) Using Voltage Vector Control

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    AbstractThis paper presents the modeling of 2 sets power converter capacity 20kW, which one has connected with the permanent magnet synchronous generator (PMSG) side and the other one, has connected to the grid side. This system is use for small hydropower (SHP) applications. In order to be able to implement the control algorithm, 20kW PMSG is model based on synchronous reference frame and designed in Matlab/Simulink. The simulation results show the electrical power flow from the generator system fed in to the grid side. The DC Link voltage must be keep constant value during the operation time. This model is able to use for implementation in the laboratory on future work
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